INFLUENCE OF A ROTATING MAGNETIC FIELD ON THE CRYSTAL GROWTH OF GaAs
نویسندگان
چکیده
The GaAs wafer market is characterised by an increasing demand on high-quality substrates ready for epitaxial post-processing. Nowadays, advanced Vertical Bridgman (VB) growth variants such as the Vertical Gradient Freeze (VGF) technique, are preferentially employed to meet the strong requirements according to a low dislocation density and high homogeneity of the substrates. By combining the VGF method with a rotating magnetic field (RMF) for a defined influence on the melt flow, a further improvement of the crystal quality seems to be possible. The benefit of the RMF may result from the stationary azimuthal and meridional flow imposed to the melt under certain conditions. Hence, it can be regarded as an additional tool to control the heat and dopant transport during the growth in a predefined way.
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